HY27UT088G2M PDF

Hynix HY27UTG2M is an 8Gb MLC NAND Flash component developed in their 60 nm process technology, first introduced in their ”TIVA” process for DRAM. DOWNLOADED. Main → Memory chips · ID · Vendor · Chip Mark · Capacity · Page Size · 0xADDA5, Hynix, HY27UTG2M, , · MEMORY CHIPS. Cheap flash burst, Buy Quality flash squid directly from China flash steam Suppliers: HY27UTG2M-TPCB HY27UTG2M (HYNIX) 1G NAND FLASH .

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The output pin RB open drain buffer signals the status of the device during each operation. Learn more – opens in a new window or tab. A cache read feature is also implemented.

Add to basket. This amount is subject to change until you make payment. Back to home page Return to top. Sellers may be required to accept returns for items that are not as described.

IC HY27UT088G2M-TPCB

In a system with multiple memories the RB pins can be. Please enter up to 7 characters for the postcode. Mouse ny27ut088g2m to zoom – Click to enlarge. The seller won’t accept returns for this item. This interface reduces the pin count and makes it possible to migrate to other densities without changing the footprint.

Hynix hy27utg2m TPCB / 8Gb MLC NAND Flash (NEW) QTY 50 | eBay

Will usually dispatch within 2 working days of receiving cleared payment – opens in a new window or tab. Add to Watch list Watching. Learn More – opens in a new window or tab. The device is offered in 3.

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Device: HY27UT088G2M [TSOP48]

The modifying can be locked using the WP input pin or using the extended lock block feature described later. This number indicates quantity of items that could be produced from components in stock. In case of missed samples, we always asking the semiconductor manufacturer for samples, but if samples are not available – also in the package you’re asking for the support – the solution from us will be delayed.

No additional import charges on delivery. Its NAND cell provides the most cost-effective solution for the solid state mass storage market.

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Parallel Operations on both planes are available, halving Program and erase time. The devices operate 3. Learn More – opens in a new window or tab Any international postage is paid in part to Pitney Bowes Inc. Back to home page. The seller hasn’t specified a postage method to United States.

If such code letter is at the end of the name, it should be omitted. A program operation allows to write the byte page in typical us and an erase operation can be performed in typical 2ms on a K-byte X8 device block. Seller assumes all responsibility for this listing.

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The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The device contains blocks, composed by 64 pages consisting in two NAND structures of 32 series connected Flash cells. Data in the page can be read out at 30ns cycle time per byte. Sign in for checkout Check out as guest.

The copy back function allows the optimization of defective blocks management: Please enter a valid postcode. Learn more – opens in new window or tab. Email to friends Share on Facebook – opens in a new window or tab Share on Twitter – opens in a new window or tab Share on Pinterest – opens in a new window or tab Add to Watch list. This option allows the direct download of the code from the NAND Flash memory device by a microcontroller, since the CE transitions do not stop the read operation.

May not post to United States – Read item description or contact seller for postage options. Resume making your offer if the page doesn’t update immediately. This interface allows a reduced pin count and easy migration towards different densities, without any rearrangement of footprint.

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